We employ a RAITH150 e-beam lithography system for pattern generation. The RAITH150 ensures sub 20 nm pattern generation and placement accuracy with minimal stitching errors over large wafer areas.
| Filament Type |
Schottky thermal field emission |
| Beam Size |
≤ 2nm @ 20 keV |
| Beam Energy |
100eV – 30 keV |
| Current Stability |
≤ 0.5% / hour |
| Import file format |
GDSII, DXF, CIF, ASCII, BMP |
| Wafer Size |
As large as 8 inches |
| Stitching |
< 40 nm (mean + 3s) |
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| A 10 nm wide line of HSQ resist on Si substrate. Scale bar = 30 nm |
A zone plate pattern with 20 nm outermost zones. Inset is a SEM image of larger field of view showing the entire zone plate. Scale bar=10 mm |
Circle array with a diameter of 150 nm and 15 nm gaps between the circles. Scale bar = 20 nm |
