We employ state of art reactive ion etching technology for transferring nanoscale patterns to silicon and polymer substrates. A few examples are cited below.

Gratings etched into HPR504 photoresist (20nm width 160nm spacing and 150nm deep, bar=100nm)	Isolated line etched into HPR504 photoresist (30nm width and 150nm deep, bar=30nm)	Grating etched into Si (70nm width, 160nm spacing and 300nm deep, bar=100nm)